Document Type : Research Article

Authors

• Arpan Deyasi ¹
• Saptarshi Bhattacharyya ²
• Srijan Chakraborty ³
• Subhro Ghosal ²

¹ Electronics and Communication Engineering, Associate Professor, RCC Institute of Information Technology, Kolkata, India

² Department of Electronic Science, A.P.C College, Kolkata, India-700131

³ Department of Electronic Science, A.P.C college, Kolkata, India-700131

Abstract

Quantum conversion efficiency and fill factor of single quantum well solar cell are analytically investigated for lower doping concentration in the well region considering the effects of SRH recombination, Auger recombination and radiative recombination. Poisson’s equation is solved at the interface junction to obtain open-circuit voltage and short-circuit current under optimized well layer thickness, where material consideration leads to type-I heterostructure for better quantum confinement. Comparative analysis exhibits better performance of 0.6% - 13.64% efficiency even when MQW structure is considered; and further little enhancement is obtained when compared with DBR based MQW structure having similar structural configuration under equal biasing condition. Extremely insignificant recombination coefficients for Auger, radiative and SRH are obtained which together speaks for higher quantum efficiency of the device in the applied voltage range of interest, and therefore, established novelty of the proposed device. Henceforth, in view of size and complexity also, the present optimized device dimension leads to higher outcome, as obtained using SCAPS-1D software.

Keywords

• Short-circuit current
• Open-circuit voltage
• Fill factor
• Quantum efficiency
• Type-I heterostructure, Dimensional optimization