Design and Fabrication of a Multi-Junction Hybrid Heterostructure Based on ZnO/CuO/PS/Si for Advanced Optoelectronic Applications

Document Type : Research Article

Authors
Jenan Saddam
Muneer Jaduaa
Physics Department, College of Science, University of Wasit, Wasit, Iraq
10.22059/jser.2025.398689.1599
Abstract
The study designs a vertically stacked Ag:ZnO/CuO/PS/Si hybrid heterojunction to enhance optoelectronic performance through material synergy and Ag doping. ZnO, CuO, and Ag structures were analyzed; the Ag:ZnO layer was doped at 3%, 5%, and 7% and deposited on porous silicon. Structural tests showed average crystallite sizes of 25.20 nm (Ag), 31.42 nm (CuO), and 35.16 nm (ZnO). AFM revealed the smoothest surface at 3% Ag (Sq = 19.11 nm), while 5% and 7% were less smooth. Optical band gaps showed quantum confinement: 2.37 eV (Ag), 3.57 eV (CuO), 3.71 eV (ZnO). The device with 7% Ag achieved the highest efficiency (0.3125) and Pmax (27.60 μW). The 5% sample had 0.1027 efficiency and 9.09 μW Pmax, and 3% had 0.0964 and 8.68 μW. Results indicate lower doping yields smoother surfaces reducing recombination, while higher Ag content improves optical response and transport, boosting photovoltaic performance.
Keywords
Hybrid heterojunction
Nanoparticles
Doping
Efficiency
Solar cell
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Journal of Solar Energy Research
Volume 10, Issue 1
Winter 2025
Pages 2161-2175