Document Type : Research Article
Authors
Physics Department, College of Science, University of Wasit, Wasit, Iraq
Abstract
The study designs a vertically stacked Ag:ZnO/CuO/PS/Si hybrid heterojunction to enhance optoelectronic performance through material synergy and Ag doping. ZnO, CuO, and Ag structures were analyzed; the Ag:ZnO layer was doped at 3%, 5%, and 7% and deposited on porous silicon. Structural tests showed average crystallite sizes of 25.20 nm (Ag), 31.42 nm (CuO), and 35.16 nm (ZnO). AFM revealed the smoothest surface at 3% Ag (Sq = 19.11 nm), while 5% and 7% were less smooth. Optical band gaps showed quantum confinement: 2.37 eV (Ag), 3.57 eV (CuO), 3.71 eV (ZnO). The device with 7% Ag achieved the highest efficiency (0.3125) and Pmax (27.60 μW). The 5% sample had 0.1027 efficiency and 9.09 μW Pmax, and 3% had 0.0964 and 8.68 μW. Results indicate lower doping yields smoother surfaces reducing recombination, while higher Ag content improves optical response and transport, boosting photovoltaic performance.
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