University of Tehran Journal of Solar Energy Research 2588-3097 10 1 2025 01 01 Design and Fabrication of a Multi-Junction Hybrid Heterostructure Based on ZnO/CuO/PS/Si for Advanced Optoelectronic Applications 2161 2175 102976 10.22059/jser.2025.398689.1599 EN Jenan Saddam Physics Department, College of Science, University of Wasit, Wasit, Iraq 0009-0007-6050-4787 Muneer Jaduaa Physics Department, College of Science, University of Wasit, Wasit, Iraq 0009-0007-6050-4787 Journal Article 2025 07 21 The study designs a vertically stacked Ag:ZnO/CuO/PS/Si hybrid heterojunction to enhance optoelectronic performance through material synergy and Ag doping. ZnO, CuO, and Ag structures were analyzed; the Ag:ZnO layer was doped at 3%, 5%, and 7% and deposited on porous silicon. Structural tests showed average crystallite sizes of 25.20 nm (Ag), 31.42 nm (CuO), and 35.16 nm (ZnO). AFM revealed the smoothest surface at 3% Ag (Sq = 19.11 nm), while 5% and 7% were less smooth. Optical band gaps showed quantum confinement: 2.37 eV (Ag), 3.57 eV (CuO), 3.71 eV (ZnO). The device with 7% Ag achieved the highest efficiency (0.3125) and Pmax (27.60 μW). The 5% sample had 0.1027 efficiency and 9.09 μW Pmax, and 3% had 0.0964 and 8.68 μW. Results indicate lower doping yields smoother surfaces reducing recombination, while higher Ag content improves optical response and transport, boosting photovoltaic performance. https://jser.ut.ac.ir/article_102976_e827196bb0f5b5aff1ac6f5a50c54354.pdf