%0 Journal Article
%T Perturbation Of Diminutive Solar Irradiance And Extreme Semiconductor Temperature On The Output Current And Voltage: The Translation Of Electrical Characteristics Into Thermal Characteristics
%J Journal of Solar Energy Research
%I University of Tehran
%Z 2588-3097
%A Nnamchi, Stephen Ndubuisi
%A Nnamchi, Onyinyechi Adanma
%D 2019
%\ 06/01/2019
%V 4
%N 2
%P 92-106
%! Perturbation Of Diminutive Solar Irradiance And Extreme Semiconductor Temperature On The Output Current And Voltage: The Translation Of Electrical Characteristics Into Thermal Characteristics
%K Perturbation
%K solar irradiance
%K semiconductor temperature
%K photovoltaic parameters
%K output current and voltage
%K thermal conductance and resistance
%R 10.22059/jser.2019.283654.1119
%X Perturbation of diminutive solar irradiance and extreme semiconductor temperature on the responsive; output current and output voltage shows the stimulus effect of diminutive solar irradiance and extreme semiconductor temperature on the responsive. This could be adduced by carrying out direct and relative perturbation of the responsive with respect to diminutive solar irradiance and extreme semiconductor temperature. The upshot from the perturbation of the output current and output voltage reveals that output current is strongly influenced by the perturbation of diminutive solar irradiance whereas the output voltage is intensely influenced by the perturbation of extreme semiconductor temperature. Analytically, crystalline and thin film semiconductors proved to be rugged under the extreme semiconductor temperature and diminutive solar irradiance sequel to appreciable magnitude of their output current and output voltage gradients; 0.085060718 A/K, 0.044481542 V/K, 0.006285375 Am2/W and 3.504405002 Vm2/W, respectively. Furthermore, the relative perturbation of output current and output voltage gave rise to important thermal characteristics of the fluid surrounding the semiconductors investigated (crystalline; mono-c-Si and poly-c-Si, and thin films; copper indium diselenide and cadmium telluride); the internal conductance (convective and radiative heat transfer coefficients) and their corresponding thermal resistance (series and parallel) are the end products of perturbation rather than the complex classical correlation. These results provide a short cut and reliable means of establishing the thermal characteristics of fluid pocket surrounding the semiconductor, which are very useful for the performance analysis of the photovoltaic systems.
%U https://jser.ut.ac.ir/article_72684_d9e0dba61a3c55d126391cbfda10d9ec.pdf